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Update to Hekate bdk 5.5.0, prelim Mariko support

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This commit is contained in:
shchmue 2020-12-04 11:20:01 -07:00
parent 04378b322d
commit 5d101cad50
89 changed files with 12779 additions and 2210 deletions
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35
bdk/mem/sdram_config.inl
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@ -15,26 +15,11 @@
* along with this program. If not, see <http://www.gnu.org/licenses/>.
*/
#define DRAM_CFG_SIZE 1896
#define DRAM_CFG_T210_SIZE 1896
#define DRAM_ID(x) (1 << (x))
#define DRAM_ID(x) BIT(x)
#define DRAM_4GB_SAMSUNG_K4F6E304HB_MGCH 0
#define DRAM_4GB_HYNIX_H9HCNNNBPUMLHR_NLN 1
#define DRAM_4GB_MICRON_MT53B512M32D2NP_062_WT 2
#define DRAM_4GB_COPPER_SAMSUNG 3
#define DRAM_6GB_SAMSUNG_K4FHE3D4HM_MFCH 4
#define DRAM_4GB_COPPER_HYNIX 5
#define DRAM_4GB_COPPER_MICRON 6
typedef struct _sdram_vendor_patch_t
{
u32 val;
u16 addr:9;
u16 dramid:7;
} sdram_vendor_patch_t;
static const sdram_params_t _dram_cfg_0_samsung_4gb = {
static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
/* Specifies the type of memory device */
.memory_type = MEMORY_TYPE_LPDDR4,
@ -112,7 +97,7 @@ static const sdram_params_t _dram_cfg_0_samsung_4gb = {
* DRAM size information
* Specifies the value for EMC_ADR_CFG
*/
.emc_adr_cfg = 0x00000001,
.emc_adr_cfg = 0x00000001, // 2 populated DRAM Devices.
/*
* Specifies the time to wait after asserting pin
@ -258,7 +243,7 @@ static const sdram_params_t _dram_cfg_0_samsung_4gb = {
.emc_cfg_dig_dll = 0x002C00A0,
.emc_cfg_dig_dll_1 = 0x00003701,
.emc_cfg_dig_dll_period = 0x00008000,
.emc_dev_select = 0x00000000,
.emc_dev_select = 0x00000000, // Both devices.
.emc_sel_dpd_ctrl = 0x00040008,
/* Pads trimmer delays */
@ -505,9 +490,9 @@ static const sdram_params_t _dram_cfg_0_samsung_4gb = {
.emc_pmacro_cmd_ctrl2 = 0x0A0A0A0A,
/* DRAM size information */
.mc_emem_adr_cfg = 0x00000001,
.mc_emem_adr_cfg_dev0 = 0x00070302,
.mc_emem_adr_cfg_dev1 = 0x00070302,
.mc_emem_adr_cfg = 0x00000001, // 2 populated DRAM Devices.
.mc_emem_adr_cfg_dev0 = 0x00070302, // Density 512MB.
.mc_emem_adr_cfg_dev1 = 0x00070302, // Density 512MB.
.mc_emem_adr_cfg_channel_mask = 0xFFFF2400,
.mc_emem_adr_cfg_bank_mask0 = 0x6E574400,
.mc_emem_adr_cfg_bank_mask1 = 0x39722800,
@ -516,7 +501,7 @@ static const sdram_params_t _dram_cfg_0_samsung_4gb = {
* Specifies the value for MC_EMEM_CFG which holds the external memory
* size (in KBytes)
*/
.mc_emem_cfg = 0x00001000,
.mc_emem_cfg = 0x00001000, // 4GB total density.
/* MC arbitration configuration */
.mc_emem_arb_cfg = 0x08000001,
@ -659,7 +644,7 @@ static const sdram_params_t _dram_cfg_0_samsung_4gb = {
.mc_mts_carveout_reg_ctrl = 0x00000000
};
static const sdram_vendor_patch_t sdram_cfg_vendor_patches[] = {
static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
// Hynix timing config.
{ 0x0000000D, 67, DRAM_ID(1) | DRAM_ID(5) }, // emc_r2w.
{ 0x00000001, 91, DRAM_ID(1) | DRAM_ID(5) }, // emc_puterm_extra.